The Microelectronics Division is strategically positioned to provide highly integrated semi-custom solutions that utilize the latest semiconductor process technologies. We offer a wide range of available semiconductor processes for gate arrays, semi-custom standard cell and full-custom applications. A partial listing of our capabilities is listed below:
| Process |
Capability |
Voltage |
Use* |
Max Gates |
Max I/O |
Comments |
| 0.18 micron CMOS |
Digital, Mixed Signal |
1.8V to 3.3V |
SC,C |
6M |
500 |
Very Dense Logic, RAM, ROM, Microprocessor |
| 0.25 micron CMOS |
Digital, Mixed Signal |
2.5V to 3.3V |
SC,C |
4M |
500 |
Very Dense Logic, DRAM |
| 0.35 micron CMOS |
Digital |
3.3V |
SC,C |
2M |
400 |
Dense Logic |
| 0.6 micron CMOS |
Analog, Digital |
3.3V to 5V |
SC,C |
200K |
300 |
EEPROM, PLD |
| 0.8 micron BiCMOS |
Analog, Digital |
3.3V to 20V |
SC,C |
120K |
250 |
Mixed Signal |
| 0.8 micron SOI CMOS |
Digital |
3.3V to 5V |
SC,C |
120K |
250 |
300K RAD QML |
| 1.0 micron CMOS |
Digital |
3.3V to 5V |
G,C |
30K |
200 |
Lower Density Logic |
| *G = Gate Array, SC = Standard Cell, C = Custom |
|
Microelectronics Services - ASIC Process Capabilities