JMAR - Products | Services - Lithography

Products | Services Bio & Chemical Sensors
     BioSentry™
     READ™
Microscopy Products
     VersaCAM™
     Comp. Xray Microscope
Laser Products
     BriteLight™
     Custom CW Lasers
Lithography Equipment
     CPL Source
     Xray Stepper Nano Tools
     Comp. Xray Microscope
     Xray NanoProbe Microelectronics Services
     ASIC Design/Packaging
     ASIC Process Capability Development Contracts

Semiconductor Lithography Equipment - CPL Source

Collimated Plasma Lithography

JMAR's CPL Light Source is the result of many years of research and development. This unique product incorporates JMAR’s patented Britelight™ laser technology and produces 1 nm wavelength X-ray energy at a high conversion efficiency allowing the final product to be both compact and cost effective.

The Source power reached in 2003 is adequate to demonstrate the effectiveness of X-ray lithography in targeted applications. We are currently developing a 15-20 watt demonstration system that can be used by semiconductor manufacturers for process development at sub-100 nm feature sizes. Examples of exposures made by JMAR's NPII Lithography System that contains JMAR's CPL™ Source can be seen in the presentation link below. Feature sizes as small as 80 nm were achieved.

CPL has the advantages of large depth of focus and small feature size, both of which are uniquely suited to the manufacturing of critical contact layers in silicon. JMAR’s Source architecture enables sufficient power scaling to meet market requirements.

CPL Source Key Advantages

1 nm wavelength permitting multi-generations of chip production
High Depth of Focus: 2-8 microns depending on the stepper gap and resolution required
High X-ray Conversion Efficiency
High Process Latitude
Suitable for fabrication of semiconductor chips down to 22 nm
No optics
Cost effective
Can accommodate resist thicknesses up to 0.5 microns

Standard Performance Specifications*

Parameter	Current	2005 (Projected)	2006-2008 (Projected)
Wavelength	1.2 nm (effective)	1.2 nm (effective);	1.2 nm (effective)
Repetition Rate	300 Hz	300 Hz	300 Hz
Pulse Energy	0.88 J	1.5 J	2 J
C.E.	9%	12%	15%
Power	15-20W	25W	150W
Field Size	22 x 22	25 x 25	30 x 30

Reliability:
MTBF (Hrs)	>250	>250	>250
MTTR (Hrs)	<2	<2	<2
Availability	>95%	>99%	>99%

Spectrum:

*Specifications vary according to customer requirements.

For more information please refer to Beta X-ray Point Source Information.